TSM9N50CI MOSFET Transistor

The TSM9N50CI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM9N50CI transistor as follows.

TSM9N50CI Transistor Specification

Transistor Code		TSM9N50CI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ITO-220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		310pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		63nC

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