TSM8N80CI MOSFET Transistor

The TSM8N80CI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM8N80CI transistor as follows.

TSM8N80CI Transistor Specification

Transistor Code		TSM8N80CI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ITO-220
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	40.3W
Drain-Source Capacitance		146pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		41nC

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