TSM85N10CZ MOSFET Transistor

The TSM85N10CZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM85N10CZ transistor as follows.

TSM85N10CZ Transistor Specification

Transistor Code		TSM85N10CZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	81A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	210W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		65nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		154nC

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