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TSM7N60CZ MOSFET Transistor

The TSM7N60CZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM7N60CZ transistor as follows.

Circuit diagram symbol of the TSM7N60CZ transistor

TSM7N60CZ Transistor Specification

Transistor Code TSM7N60CZ
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 85pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 60nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 28nC

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