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TSM6N50CH MOSFET Transistor

The TSM6N50CH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM6N50CH transistor as follows.

Circuit diagram symbol of the TSM6N50CH transistor

TSM6N50CH Transistor Specification

Transistor Code TSM6N50CH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 5.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 90W
Drain-Source Capacitance 85pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 25nC

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