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TSM60N06CP MOSFET Transistor

The TSM60N06CP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM60N06CP transistor as follows.

Circuit diagram symbol of the TSM60N06CP transistor

TSM60N06CP Transistor Specification

Transistor Code TSM60N06CP
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 66A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0073Ohm
Power Dissipation (Maximum) PD 44.6W
Drain-Source Capacitance 668pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 19nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 81nC

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