TSM5ND50CH MOSFET Transistor

The TSM5ND50CH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM5ND50CH transistor as follows.

TSM5ND50CH Transistor Specification

Transistor Code		TSM5ND50CH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		75pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11.7nS
Gate-Threshold Voltage (Maximum)		4.8V
Total Gate Charge		20nC

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