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TSM4NB60CH MOSFET Transistor

The TSM4NB60CH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM4NB60CH transistor as follows.

Circuit diagram symbol of the TSM4NB60CH transistor

TSM4NB60CH Transistor Specification

Transistor Code TSM4NB60CH
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.5Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 53.2pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 4.5V
Total Gate Charge 14.5nC

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