TSM4N90CI MOSFET Transistor

The TSM4N90CI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM4N90CI transistor as follows.

TSM4N90CI Transistor Specification

Transistor Code		TSM4N90CI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ITO-220
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	38.7W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		38nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		25nC

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