TSM4N80CZ MOSFET Transistor

The TSM4N80CZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM4N80CZ transistor as follows.

TSM4N80CZ Transistor Specification

Transistor Code		TSM4N80CZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3Ohm
Power Dissipation (Maximum)	PD	123W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		38nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		20nC

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