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TSM4N60CI MOSFET Transistor

The TSM4N60CI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM4N60CI transistor as follows.

Circuit diagram symbol of the TSM4N60CI transistor

TSM4N60CI Transistor Specification

Transistor Code TSM4N60CI
Transistor Type MOSFET
Control Channel Type N-Channel
Package ITO-220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.5Ohm
Power Dissipation (Maximum) PD 25W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 15nC

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