TSM40N03PQ33 MOSFET Transistor

The TSM40N03PQ33 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM40N03PQ33 transistor as follows.

TSM40N03PQ33 Transistor Specification

Transistor Code		TSM40N03PQ33
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN33
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0046Ohm
Power Dissipation (Maximum)	PD	3.8W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		2.2V
Total Gate Charge		12nC

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