TSM35N03PQ56 MOSFET Transistor

The TSM35N03PQ56 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM35N03PQ56 transistor as follows.

TSM35N03PQ56 Transistor Specification

Transistor Code		TSM35N03PQ56
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PDFN56
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	4.2W
Drain-Source Capacitance		210pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		8.2nC

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