TSM2N60SCW MOSFET Transistor

The TSM2N60SCW is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM2N60SCW transistor as follows.

TSM2N60SCW Transistor Specification

Transistor Code		TSM2N60SCW
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Transistor SMD Code		2N60S*
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		56pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		13nC

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