TSM2611EDCX6 MOSFET Transistor

The TSM2611EDCX6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM2611EDCX6 transistor as follows.

TSM2611EDCX6 Transistor Specification

Transistor Code		TSM2611EDCX6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-26
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	0.83W
Drain-Source Capacitance		144pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		13.5nC

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