TSM23N50CN MOSFET Transistor

The TSM23N50CN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM23N50CN transistor as follows.

TSM23N50CN Transistor Specification

Transistor Code		TSM23N50CN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PN
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.22Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		357pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		64nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		66nC

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