TSM2312CX MOSFET Transistor

The TSM2312CX is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM2312CX transistor as follows.

TSM2312CX Transistor Specification

Transistor Code		TSM2312CX
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Transistor SMD Code		12*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.033Ohm
Power Dissipation (Maximum)	PD	0.75W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		11nC

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