TSM20N50CI MOSFET Transistor

The TSM20N50CI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM20N50CI transistor as follows.

TSM20N50CI Transistor Specification

Transistor Code		TSM20N50CI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ITO-220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		296pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		72nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		54nC

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