TSM1NB60SCT MOSFET Transistor

The TSM1NB60SCT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM1NB60SCT transistor as follows.

TSM1NB60SCT Transistor Specification

Transistor Code		TSM1NB60SCT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-92
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	10Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		17.1pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.8nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		6.1nC

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