TSM1N80CW MOSFET Transistor

The TSM1N80CW is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM1N80CW transistor as follows.

TSM1N80CW Transistor Specification

Transistor Code		TSM1N80CW
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Transistor SMD Code		01N80*
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	21.6Ohm
Power Dissipation (Maximum)	PD	2.1W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		5nC

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