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TSM1N60LCP MOSFET Transistor

The TSM1N60LCP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM1N60LCP transistor as follows.

Circuit diagram symbol of the TSM1N60LCP transistor

TSM1N60LCP Transistor Specification

Transistor Code TSM1N60LCP
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 12Ohm
Power Dissipation (Maximum) PD 30W
Drain-Source Capacitance 28pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 21nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 8.5nC

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