TSM1N60LCH MOSFET Transistor

The TSM1N60LCH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM1N60LCH transistor as follows.

TSM1N60LCH Transistor Specification

Transistor Code		TSM1N60LCH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	12Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		28pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8.5nC

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