TSM1N45DCS MOSFET Transistor

The TSM1N45DCS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TSM1N45DCS transistor as follows.

TSM1N45DCS Transistor Specification

Transistor Code		TSM1N45DCS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOP-8
Drain-Source Voltage (Maximum)	VDS	450V
Gate-Source Voltage (Maximum)	VGS	50V
Drain Current (Maximum)	ID	0.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.25Ohm
Power Dissipation (Maximum)	PD	0.9W
Drain-Source Capacitance		29pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		4.9V
Total Gate Charge		6.5nC

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