TPCS8212 MOSFET Transistor

The TPCS8212 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPCS8212 transistor as follows.

TPCS8212 Transistor Specification

Transistor Code		TPCS8212
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP8
Transistor SMD Code		S8212
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.4nS

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