TPCS8209 MOSFET Transistor

The TPCS8209 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPCS8209 transistor as follows.

TPCS8209 Transistor Specification

Transistor Code		TPCS8209
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP8
Transistor SMD Code		S8209
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4.5nS

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