TPCS8105 MOSFET Transistor

The TPCS8105 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPCS8105 transistor as follows.

TPCS8105 Transistor Specification

Transistor Code		TPCS8105
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP8
Transistor SMD Code		S8105
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0135Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		590pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS

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