TPCF8104 MOSFET Transistor

The TPCF8104 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPCF8104 transistor as follows.

TPCF8104 Transistor Specification

Transistor Code		TPCF8104
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		VS8
Transistor SMD Code		F3D
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		210pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2.8nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		34nC

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