TPCF8103 MOSFET Transistor

The TPCF8103 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPCF8103 transistor as follows.

TPCF8103 Transistor Specification

Transistor Code		TPCF8103
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		VS8
Transistor SMD Code		F3C
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS

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