TPCF8001 MOSFET Transistor

The TPCF8001 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPCF8001 transistor as follows.

TPCF8001 Transistor Specification

Transistor Code		TPCF8001
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		VS8
Transistor SMD Code		F2A
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.023Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.8nS

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