TPCC8009 MOSFET Transistor

The TPCC8009 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPCC8009 transistor as follows.

TPCC8009 Transistor Specification

Transistor Code		TPCC8009
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSON_ADVANCE
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	27W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		26nC

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