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TPC8302 MOSFET Transistor

The TPC8302 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC8302 transistor as follows.

Circuit diagram symbol of the TPC8302 transistor

TPC8302 Transistor Specification

Transistor Code TPC8302
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOP8
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.12Ohm
Power Dissipation (Maximum) PD 1.5W
Drain-Source Capacitance 310pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS

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