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TPC8216-H MOSFET Transistor

The TPC8216-H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC8216-H transistor as follows.

Circuit diagram symbol of the TPC8216-H transistor

TPC8216-H Transistor Specification

Transistor Code TPC8216-H
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOP8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 1.5W
Drain-Source Capacitance 200pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 2.3nS

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