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TPC8125 MOSFET Transistor

The TPC8125 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC8125 transistor as follows.

Circuit diagram symbol of the TPC8125 transistor

TPC8125 Transistor Specification

Transistor Code TPC8125
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOP8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.013Ohm
Power Dissipation (Maximum) PD 1.9W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 64nC

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