TPC8123 MOSFET Transistor

The TPC8123 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC8123 transistor as follows.

TPC8123 Transistor Specification

Transistor Code		TPC8123
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	1.9W
Total Gate Charge		68nC

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