TPC8122 MOSFET Transistor

The TPC8122 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC8122 transistor as follows.

TPC8122 Transistor Specification

Transistor Code		TPC8122
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.008Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		740pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Total Gate Charge		62nC

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