TPC8119 MOSFET Transistor

The TPC8119 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC8119 transistor as follows.

TPC8119 Transistor Specification

Transistor Code		TPC8119
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		475pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Total Gate Charge		40nC

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