TPC8118 MOSFET Transistor

The TPC8118 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC8118 transistor as follows.

TPC8118 Transistor Specification

Transistor Code		TPC8118
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		860pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Total Gate Charge		65nC

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