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TPC8114 MOSFET Transistor

The TPC8114 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC8114 transistor as follows.

Circuit diagram symbol of the TPC8114 transistor

TPC8114 Transistor Specification

Transistor Code TPC8114
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOP8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 18A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0045Ohm
Power Dissipation (Maximum) PD 1.9W
Drain-Source Capacitance 1460pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS

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