TPC8113 MOSFET Transistor

The TPC8113 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC8113 transistor as follows.

TPC8113 Transistor Specification

Transistor Code		TPC8113
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		650pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		107nC

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