TPC8112 MOSFET Transistor

The TPC8112 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC8112 transistor as follows.

TPC8112 Transistor Specification

Transistor Code		TPC8112
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		1050pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Total Gate Charge		130nC

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