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TPC8105-H MOSFET Transistor

The TPC8105-H is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC8105-H transistor as follows.

Circuit diagram symbol of the TPC8105-H transistor

TPC8105-H Transistor Specification

Transistor Code TPC8105-H
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOP8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 2.4W
Drain-Source Capacitance 485pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS

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