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TPC8030 MOSFET Transistor

The TPC8030 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC8030 transistor as follows.

Circuit diagram symbol of the TPC8030 transistor

TPC8030 Transistor Specification

Transistor Code TPC8030
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOP8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.009Ohm
Power Dissipation (Maximum) PD 1.9W
Drain-Source Capacitance 390pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14nS

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