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TPC6111 MOSFET Transistor

The TPC6111 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC6111 transistor as follows.

Circuit diagram symbol of the TPC6111 transistor

TPC6111 Transistor Specification

Transistor Code TPC6111
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT6_VS6
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 5.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 2.2W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1V

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