TPC6110 MOSFET Transistor

The TPC6110 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC6110 transistor as follows.

TPC6110 Transistor Specification

Transistor Code		TPC6110
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT6_VS6
Drain-Source Voltage (Maximum)	VDS	30V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.056Ohm
Power Dissipation (Maximum)	PD	2.2W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V

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