The TPC6109-H is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the TPC6109-H transistor as follows.
Transistor Code | TPC6109-H | |
---|---|---|
Transistor Type | MOSFET | |
Control Channel Type | P-Channel | |
Package | SOT6_VS6 | |
Drain-Source Voltage (Maximum) | VDS | 30V |
Drain Current (Maximum) | ID | 5A |
Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.059Ohm |
Power Dissipation (Maximum) | PD | 2.2W |
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