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TPC6109-H MOSFET Transistor

The TPC6109-H is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC6109-H transistor as follows.

Circuit diagram symbol of the TPC6109-H transistor

TPC6109-H Transistor Specification

Transistor Code TPC6109-H
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT6_VS6
Drain-Source Voltage (Maximum) VDS 30V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.059Ohm
Power Dissipation (Maximum) PD 2.2W

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