TPC6001 MOSFET Transistor

The TPC6001 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TPC6001 transistor as follows.

TPC6001 Transistor Specification

Transistor Code		TPC6001
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		VS6
Transistor SMD Code		S2A
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	2.2W
Drain-Source Capacitance		222pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS

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