TMU7N60Z MOSFET Transistor

The TMU7N60Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMU7N60Z transistor as follows.

TMU7N60Z Transistor Specification

Transistor Code		TMU7N60Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		104pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		19nC

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