TMU5N60AZ MOSFET Transistor

The TMU5N60AZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMU5N60AZ transistor as follows.

TMU5N60AZ Transistor Specification

Transistor Code		TMU5N60AZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.1Ohm
Power Dissipation (Maximum)	PD	98.4W
Drain-Source Capacitance		72pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		14nC

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