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TMU4N65AZ MOSFET Transistor

The TMU4N65AZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMU4N65AZ transistor as follows.

Circuit diagram symbol of the TMU4N65AZ transistor

TMU4N65AZ Transistor Specification

Transistor Code TMU4N65AZ
Transistor Type MOSFET
Control Channel Type N-Channel
Package I-PAK
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.4Ohm
Power Dissipation (Maximum) PD 98.4W
Drain-Source Capacitance 67pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 22nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 15nC

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