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TMU2N60Z MOSFET Transistor

The TMU2N60Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMU2N60Z transistor as follows.

Circuit diagram symbol of the TMU2N60Z transistor

TMU2N60Z Transistor Specification

Transistor Code TMU2N60Z
Transistor Type MOSFET
Control Channel Type N-Channel
Package I-PAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 4Ohm
Power Dissipation (Maximum) PD 52W
Drain-Source Capacitance 41pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 9.6nC

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